4A 600V Ultra Fast Recovery Rectifier Diode GPP MUR460G Diode Glass Passivated Chip

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Changzhou Trustec Company Limited

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4A 600V Ultra Fast Recovery Rectifier Diode GPP MUR460G Diode Glass Passivated Chip

Name: 4A 600V Ultra Fast Recovery Rectifier Diode GPP MUR460G Diode Glass Passivated Chip
Brand: trusTec
Price: 1 USD

Best 4A 600V Ultra Fast Recovery Rectifier Diode GPP MUR460G Diode Glass Passivated Chip wholesale

Brand Name : trusTec

Model Number : MUR460G

Certification : ROHS

Place of Origin : China

MOQ : 1K PCS

Price : Negotiable (EXW/FOB/CNF)

Payment Terms : T/T

Supply Ability : 800KK PCS per month

Delivery Time : 10 work days fresh products

Packaging Details : 1K PCS per tape & box, 10K PCS per carton.

Type : Ultra Fast Recovery Rectifier Diode

Material : Silicon

Package : DO-27（DO-201AD）

Trr : 50ns

Max. forward voltage : 1.3V

Max. forward current : 4A

Max. reverse voltage : 600V

Packing : Tape & Box（T/B）

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4A 600V GPP Plastic Silicon Ultra Fast Recovery Rectifier Diode MUR460G Glass Passivated Chip

MUR405G THRU MUR4100G

GLASS PASSIVATED ULTRA FAST RECTIFIERS

Reverse Voltage - 50 to 1000 Volts Forward Current - 4.0 Ampere

Product Drawing

4A 600V Ultra Fast Recovery Rectifier Diode GPP MUR460G Diode Glass Passivated Chip

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

	SYMBOLS	MUR 405	MUR 410	MUR 420	MUR 440	MUR 460	MUR 480	MUR 4100	UNITS
Maximum repetitive peak reverse voltage	VRRM	50	100	200	400	600	800	1000	VOLTS
Maximum RMS voltage	VRMS	35	70	140	280	420	560	700	VOLTS
Maximum DC blocking voltage	VDC	50	100	200	400	600	800	1000	VOLTS
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃	I(AV)	4.0							Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	125							Amps
Maximum instantaneous forward voltage at 6.0A	VF	0.89			1.3		1.7		Volts
Maximum DC reverse current TA=25℃ at rated DC blocking voltage TA=100℃10	IR	5.0 50.0							µA
Maximum reverse recovery time (NOTE 1)	trr	25			50		75		ns
Typical junction capacitance (NOTE 2)	CJ	65.0							pF
Typical thermal resistance (NOTE 3)	RθJA	28.0							℃/W
Operating junction and storage temperature range	TJ,TSTG	-55 to +150							℃

Note:

1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted

FEATURES

Glass passivated chip junction

The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

Ultra fast switching for high efficiency

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.04 ounce, 1.10 grams

Characteristic Curves

4A 600V Ultra Fast Recovery Rectifier Diode GPP MUR460G Diode Glass Passivated Chip

Product Tags:

MUR460G GPP Diode

fast recovery rectifier diode 600v

4A 600V MUR460G Diode

4A 600V Ultra Fast Recovery Rectifier Diode GPP MUR460G Diode Glass Passivated Chip Images

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